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ÐÂÀû18(ÖйúÇø)¹Ù·½ÍøÕ¾ 0.11 Ultra-low Leakage

 

ÐÂÀû18(ÖйúÇø)¹Ù·½ÍøÕ¾ Overview
        ¹«Ë¾ 0.11 ULL½ÓÄÉÁËÂÁ»¥Á¬ÊÖÒÕ£¬£¬£¬£¬£¬1P8M ¼Ü¹¹£¬£¬£¬£¬£¬Ìṩ1.5V ÄÚºËÆ÷¼þ¼°3.3V ÊäÈëÊä³öÆ÷¼þ£¬£¬£¬£¬£¬¾ß±¸³¬µÍйµçÌØµã£¬£¬£¬£¬£¬Æ÷¼þÌØÕ÷Ioff (pA/um)<0.5¡£¡£¡£¡£¡£¡£¡£

 

ÐÂÀû18(ÖйúÇø)¹Ù·½ÍøÕ¾ Key Features 
- Single poly, eight-metal-layer process
- Al backend with low-K FSG material
- Device Ioff (typical) <0.5 pA/um

 

ÐÂÀû18(ÖйúÇø)¹Ù·½ÍøÕ¾ Applications
- MCU
- IOT


 

ÐÂÀû18(ÖйúÇø)¹Ù·½ÍøÕ¾ 0.11 ULL flash 

 

ÐÂÀû18(ÖйúÇø)¹Ù·½ÍøÕ¾ Overview
        ¹«Ë¾ 0.11 ULL flash ¹¤ÒÕÊÇ»ùÓÚ0.11 ULL¹¤ÒÕǶÈëflash, Âß¼­Æ÷¼þÓëULL¼æÈÝ¡£¡£¡£¡£¡£¡£¡£Ìṩ³¬µÍ¹¦ºÄÄ£ÄâIP¡£¡£¡£¡£¡£¡£¡£

 

ÐÂÀû18(ÖйúÇø)¹Ù·½ÍøÕ¾ Key Features
- Double poly, eight-metal-layer process
- Al backend with low-K FSG material
- Competitive flash macro cell size

 

ÐÂÀû18(ÖйúÇø)¹Ù·½ÍøÕ¾ Application 
- MCU
- IOT

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